PowerRCX provides extraction of parasitic capacitances with sufficiently high accuracy without need for preliminary tuning of parameters with a solver. The parasitic capacitances include the capacitance of MOSFET drain and source areas, as well as the capacitances between the conductive planes including substrate/well, active area, polysilicon and metals. To calculate the capacitances of sources and drains, their areas and perimeters are extracted and passed to transistor models, where the capacitances are calculated in the course of simulation.

The extracted values of capacitances are written to the output SPICE netlist to corresponding nodes or between the corresponding nodes.